Gate-bias instability of few-layer WSe2 field effect transistors

Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors

We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare th...

Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors

We study the bias-temperature instability (BTI) on the back gate of double-gated graphene field-effect transistors (GFETs). The dependence of the resulting degradation on the stress time and oxide field is analyzed. Finally, the results are compared to the ones obtained on the high-k top gate of the same device.

Bias-temperature instability in single-layer graphene field-effect transistors

Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors

Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe2 exfoliated onto SiO2. Without dielectric engineering and beyond a T-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm(2)/Vs at T = 300 K. The hole Hall mobility reaches a maximum value of 650 cm(2)/Vs as T is...

Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

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